Silicon carbide membrane for X-ray lithography and method for th

Details Silicon carbide membrane for X-ray lithography and method for th Silicon carbide membrane for X-ray lithography and method for th

1989-12-11

1992-12-08

Robinson, Ellis P.

Compositions: coating or plastic

Coating or plastic compositions

Inorganic materials only containing at least one metal atom

428446, 428698, 501 88, H01L 2102

Patent

active

051694409

ABSTRACT:
A silicon carbide membrane suitable as a masking material in X-ray lithography is provided, which is free from the defects in the prior art products prepared by the chemical vapor deposition method such as pinholes and instability against irradiation with high-energy beams. The silicon carbide membrane is prepared by the deposition of a silicon carbide film on a silicon substrate by the method of sputtering using silicon carbide as the target material under specified atmospheric conditions, substrate temperature and power density on the target and removing the silicon substrate leaving the peripheral zone to serve as a frame.

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patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4941942 (1990-07-01), Bruns et al.

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