Silicon carbide material for low-melting point fusion metal

Details Silicon carbide material for low-melting point fusion metal Silicon carbide material for low-melting point fusion metal

1982-06-18

1984-11-27

McCamish, Marion E.

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Web or sheet containing structurally defined element or...

Physical dimension specified

428446, 428450, B32B 1500

Patent

active

044851430

ABSTRACT:
A silicon carbide material for low-melting point fusion metal composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide and containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride, and on this film or in place of this film silicon nitride and/or boron nitride is coated.

REFERENCES:
patent: 3911188 (1975-10-01), Torti et al.
patent: 4187344 (1980-02-01), Fredriksson
patent: 4288495 (1981-09-01), Terner et al.

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