Silicon carbide manufacturing device and method of...

Details Silicon carbide manufacturing device and method of... Silicon carbide manufacturing device and method of...

2011-02-01

2011-02-01

Song, Matthew J (Department: 1714)

Coating apparatus

Gas or vapor deposition

C117S200000, C117S084000, C117S088000, C117S951000

Reexamination Certificate

active

07879150

ABSTRACT:
A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.

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Office Action dated Sep. 14, 2010 from Japanese Patent Office in corresponding Japanese Patent Application No. 2006-241642 (and English Translation).

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