Silicon carbide LOCOS vertical MOSFET device

Details Silicon carbide LOCOS vertical MOSFET device Silicon carbide LOCOS vertical MOSFET device

1995-01-09

1997-06-03

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257330, 257339, 257342, H01L 310312, H01L 2976, H01L 2994, H01L 31062

Patent

active

056357320

ABSTRACT:
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor regions, rather than defining the regions with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.

REFERENCES:
patent: 5233215 (1993-08-01), Baliga
patent: 5506421 (1996-04-01), Palmour

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