Silicon carbide light emitting diode and a method for the same

Details Silicon carbide light emitting diode and a method for the same Silicon carbide light emitting diode and a method for the same

1991-05-17

1993-09-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257103, 257613, 257656, 257657, H01L 3300

Patent

active

052432041

ABSTRACT:
There are provided silicon carbide light emitting diodes having a p-n junction which is constituted by a p-type silicon carbide single-crystal layer and an n-type silicon carbide single-crystal layer formed thereon. In cases where light emission caused by recombination of free excitons is substantially utilized, at least a part of the n-type silicon carbide layer adjacent to the interface of the p-n junction is doped with a donor impurity at a concentration of 5.times.10.sup.16 cm.sup.-3 or lower. In cases where light emission caused by acceptor-associated recombination is substantially utilized, the p-type silicon carbide layer is doped with an acceptor impurity and at least a part of the n-type silicon carbide layer adjacent to the interface of the p-n junction is doped with a donor impurity at a concentration of 1.times.10.sup.18 cm.sup.-3 or higher. Also provided are a method for producing such silicon carbide light emitting diodes and a method for producting another silicon carbide light emitting diode.

REFERENCES:
patent: 5027168 (1991-06-01), Edmond
patent: 5061972 (1991-10-01), Edmond
Ikeda et al, J. Appl. Phys. (Dec. 1979), 50(12): 8215-8225.
Kong et al.--J. Appl. Phys. (Sep. 1, 1988) 64(5): 2672-2679.
Nishino et al., Japanese Journal of Appl. Phys. Jul. (1980) 19(7): 353-356.

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