Silicon carbide layer on diamond substrate for supporting...

Details Silicon carbide layer on diamond substrate for supporting... Silicon carbide layer on diamond substrate for supporting...

2006-02-06

2009-08-25

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S190000, C257S200000, C257S712000, C257SE29104

Reexamination Certificate

active

07579626

ABSTRACT:
A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.

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