Silicon carbide junction field effect transistor device for high

Details Silicon carbide junction field effect transistor device for high Silicon carbide junction field effect transistor device for high

1995-05-11

1996-04-23

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257256, 257265, 257272, H01L 310312, H01L 2980, H01L 31112

Patent

active

055106323

ABSTRACT:
A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially grown on the substrate. A SiC n type conductivity layer is formed by ion implantation or epitaxial deposition upon the p type layer. The contacting surfaces of the p and n type layers form a junction. A p+ type gate area supported by the n type layer is formed either by the process of ion implantation or the process of depositing and patterning a second p type layer. The source and drain areas are heavily doped to n+ type conductivity by implanting donor ions in the n type layer.

REFERENCES:
patent: 4925808 (1990-05-01), Richardson
patent: 5087576 (1992-02-01), Edmond et al.
patent: 5264713 (1993-11-01), Palmour
"Nitrogen-Implanted SiC Diodes Using High-Temperature Implantation" by Mario Ghezzo, et al., IEEE Electron Device letters, vol. 13, No. 12, Dec. 1992.
"Epitaxial Deposition of Silicon Carbide from Silicon Tetrachloride and Hexane" by WV Muensch, et al., Thin Solid Films, 31 (1976), pp. 39-51.

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