Silicon carbide high frequency high power amplifier

Details Silicon carbide high frequency high power amplifier Silicon carbide high frequency high power amplifier

1998-04-03

1999-11-30

Lee, Benny

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330279, 330284, H03F 368, H03G 310

Patent

active

059949651

ABSTRACT:
A high power amplifier (10) includes intelligent independent fault tolerant amplifying modules (11). Each of the modules (11) includes a power amplifier (17) having a plurality of silicon carbide transistor circuits (27-30) coupled in parallel and driven by a silicon carbide transistor circuit (26). The module (11) also includes a dedicated hybrid controller (18) that monitors the operational conditions of the power amplifier (17) and optimizes these operational conditions in order to provide fault isolation and to avoid unwanted failure of the module (11) as a whole.

REFERENCES:
patent: 4724400 (1988-02-01), Luettgenau
patent: 4794343 (1988-12-01), Yang
patent: 4926136 (1990-05-01), Olver
patent: 5101173 (1992-03-01), DiPiazza et al.
patent: 5812221 (1998-09-01), Davis et al.

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