Silicon carbide gemstones

Details Silicon carbide gemstones Silicon carbide gemstones

1995-08-31

1998-06-09

Garrett, Felisa

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

117 19, 117 33, 117929, 427204, C01B 3136

Patent

active

057628963

ABSTRACT:
Synthetic gemstones having extraordinary brilliance and hardness are formed from large single crystals of relatively low impurity, translucent silicon carbide of a single polytype that are grown in a furnace sublimation system. The crystals are cut into rough gemstones that are thereafter fashioned into finished gemstones. A wide range of colors and shades is available by selective doping of the crystal during growth. A colorless gemstone is produced by growing the crystal undoped in a system substantially free of unwanted impurity atoms.

REFERENCES:
patent: Re34861 (1995-02-01), Davis et al.
patent: 998230 (1911-03-01), Verneuil
patent: 1004505 (1911-09-01), Verneuil
patent: 1745607 (1930-02-01), D'Esposito
patent: 2488507 (1949-11-01), Burdick et al.
patent: 2690062 (1954-09-01), Burdick et al.
patent: 2690630 (1954-10-01), Eversole et al.
patent: 2913313 (1959-11-01), Schroll
patent: 2941248 (1960-06-01), Hall
patent: 2947609 (1960-08-01), Strong
patent: 2947610 (1960-08-01), Hall et al.
patent: 3025192 (1962-03-01), Lowe
patent: 3174827 (1965-03-01), Wakelyn et al.
patent: 3297407 (1967-01-01), Wentorf, Jr.
patent: 3317035 (1967-05-01), Cannon
patent: 3423177 (1969-01-01), Bovenkerk
patent: 3485591 (1969-12-01), Evans et al.
patent: 3630678 (1971-12-01), Gardner
patent: 3630679 (1971-12-01), Angus
patent: 3897529 (1975-07-01), Carr et al.
patent: 3912521 (1975-10-01), Cline et al.
patent: 3950596 (1976-04-01), Carr et al.
patent: 3959527 (1976-05-01), Droege
patent: 4030317 (1977-06-01), Rogell
patent: 4034066 (1977-07-01), Strong et al.
patent: 4039726 (1977-08-01), Carr et al.
patent: 4042673 (1977-08-01), Strong
patent: 4073380 (1978-02-01), Strong et al.
patent: 4193975 (1980-03-01), Kotval et al.
patent: 4262497 (1981-04-01), Morris et al.
patent: 4287168 (1981-09-01), Wentorf, Jr. et al.
patent: 4301134 (1981-11-01), Strong
patent: 4322396 (1982-03-01), Strong
patent: 4490440 (1984-12-01), Reber
patent: 4547258 (1985-10-01), Witter et al.
patent: 4632817 (1986-12-01), Yazu et al.
patent: 4662348 (1987-05-01), Hall et al.
patent: 5015499 (1991-05-01), Carbone
patent: 5202105 (1993-04-01), Boecker et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5441011 (1995-08-01), Takhashi et al.
Hurlbut, Cornelius S. and Kammerling, Robert C. (1991) Gemology 2nd Edition, John Wiley: New York. pp. 309-324.
Faust, J.W., Campbell, R.B., Choyke, W.J., and Patrick, L. (1973) Tables of Data on Silicon Carbide, Appendix II. Conference Proceedings from the Executive and Program Committees of the International Conference on Silicon Carbide-1973.
Mandelung, O. (Ed.). (1991) Semiconductors: Group IV Elements and III-V Compounds. In: Data in Science and Technology, Poerschke, R. (Ed. in Chief). Springer-Verlag, Berlin, Heidelberg, New York pp. 47-57.
Landolt-Borstein. (1982). Physic of Group IV Elements and III-V Compounds. New Series, Group III. vol. 17. Berlin, Heidelberg, New York. pp. 133-142 and 403-591.
Burgemeister, E.A. von Muench, W. and Pettenpaul, E. (1979) Thermal Conductivity and Electrical Properties of 6H Silicon Carbide. Journal of Applied Physics. 50(9) 5790-5794.
O'Dohoghue, M. (1983) A Guide to Man-made Gemstones, Van Nostrand Reinhold: New York.
Gemological Institute of America. (1989). The GIA Jeweler's Manual, 3rd Edition. Santa Monica, CA: GIA. pp. 241-245.
Gemological Institute of America. (1994). Colored Stone Course, Assignment 1: Course Introduction. Santa Monica, CA: GIA. pp. 9-17.
Gemological Institute of America. (1994). Colored Stone Course, Assignment 7: Fashioning Styles. Santa Monica, CA: GIA. pp. 5-13.
Gemological Institute of America. (1994., Colored Stone Course, Assignment 17: Fashioning Processess. Santa Monica, CA: GIA. pp. 12-16.
Nassau, K. (1980). Gems Made by Man, Gemological Institute of America, Santa Monica, California, pp. 252-253.

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