Silicon carbide gate turn-off thyristor arrangement

Details Silicon carbide gate turn-off thyristor arrangement Silicon carbide gate turn-off thyristor arrangement

1997-10-06

1998-11-03

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257146, 257135, 257138, 257133, 438186, H01L 31312, H01L 2971

Patent

active

058312897

ABSTRACT:
A silicon carbide gate turn off thyristor (GTO) has a silicon carbide junction field effect transistor (JFET) connected between the gate of the GTO and one of its anode or cathode electrodes thereby minimizing cooling requirements while providing for rapid switching.

REFERENCES:
patent: 5539217 (1996-07-01), Edmond et al.
patent: 5614737 (1997-03-01), Piccone
patent: 5641695 (1997-06-01), Moore et al.
patent: 5719409 (1998-02-01), Singh et al.
patent: 5744826 (1998-04-01), Takeuchi et al.
patent: 5757034 (1998-05-01), Ajit
patent: 5780197 (1998-07-01), Mori

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