Silicon carbide film forming apparatus

Details Silicon carbide film forming apparatus Silicon carbide film forming apparatus

1992-10-16

1993-06-22

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 427237, 427238, 427249, C23C 1600

Patent

active

052213552

ABSTRACT:
An apparatus for forming a high purity silicon carbide film on the inner surface of a cylindrical member by a chemical vapor phase deposition process is provided. The member to be coated is received in a reaction vessel and heated by a heating means. The apparatus includes a gas feed conduit having a distal end disposed for axial motion within the member, for feeding a source gas containing a carbon source and a silicon source into the interior of the member, and a gas discharge conduit having a distal end disposed for axial motion within the member, for discharging used reaction gases from within the member. The gas feed and discharge conduits are moved so that their distal ends move through the member in unison to continuously move the reaction region.

REFERENCES:
patent: 4293594 (1981-10-01), Yoldas

Affiliated with

Also associated with

Rating

Silicon carbide film forming apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide film forming apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide film forming apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1438878