Silicon carbide film for X-ray masks and vacuum windows

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430966, 428698, 378 35, G03F 900

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active

046083260

ABSTRACT:
A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.

REFERENCES:
patent: 4253029 (1981-02-01), Lepselter et al.
patent: 4436797 (1984-03-01), Brady et al.
patent: 4451544 (1984-05-01), Kawabuchi
Bassous et al., "High Transmission X-ray Mask for Lithographic Applications," IBM Tech. Disclosure Bulletin, vol. 18, No. 12, May 1976, pp. 4210-4211.

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