Silicon carbide film for X-ray masks and vacuum windows

Details Silicon carbide film for X-ray masks and vacuum windows Silicon carbide film for X-ray masks and vacuum windows

1985-11-18

1990-11-20

Robinson, Ellis P.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including aperture

428446, 428698, 428701, 428704, B32B 310, B32B 1800, G03F 900

Patent

active

049718517

ABSTRACT:
A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.

REFERENCES:
patent: 2609318 (1952-09-01), Swsentzel
patent: 2943008 (1960-06-01), Saunders
patent: 3911188 (1975-10-01), Torti, Jr. et al.
patent: 4120731 (1978-10-01), Hillig et al.

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