Silicon carbide field effect transistor

Details Silicon carbide field effect transistor Silicon carbide field effect transistor

1994-02-15

1994-08-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257335, 257607, 257613, 257 66, H01L 2910, H01L 29161, H01L 29167

Patent

active

053389450

ABSTRACT:
A silicon carbide field effect transistor of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the source and base regions comprise substantially monocrystalline silicon carbide formed from recrystallized amorphous silicon carbide, The source and base regions also have vertical sidewalls defining the p-n junction between the source/base and base/drain regions, respectively. The vertical orientation of the sidewalls arises from the respective implantation of electrically inactive ions into the substrate during the amorphizing steps for forming the base region in the drain and for forming the source region in the base region. The electrically inactive ions are selected from the group consisting of silicon, hydrogen, neon, helium, carbon and argon. A gate and gate insulating region are also provided on the face of the substrate above the base region. By applying an appropriate turn-on base signal to the gate, a channel is created in the base region. The channel region electrically connects the source to the drain. The source and base are also electrically connected by a source contact on the face, opposite the portion of the base region wherein the channel is formed.

REFERENCES:
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 4916507 (1990-04-01), Boudou et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 5032880 (1991-07-01), Tsunoda
patent: 5087576 (1992-02-01), Edmond et al.
patent: 5170231 (1992-12-01), Fujii et al.
Trew, Yan and Mock, "The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications," Proceedings of the IEEE, vol. 79, No. 5, pp. 598-620, May 1991.
Bhatnagar and Baliga, "Analysis of Silicon Carbide Power Device Performance", IEEE, pp. 176-180, 1991.
Pan and Steckl, "Reactive In Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen", J. Electrochem. Soc., vol. 137, No. 1, pp. 212-220, Jan. 1990.
Davis, "Epitaxial Growth and Doping of and Device Development in Monocrystalline .beta.-SiC Semiconductor Thin Films" Thin Solid Films, vol. 181, pp. Dec. 1-15, 1989.
Shenai, Scott and Baliga, "Optimum Semiconductors for High-Power Electronics,", IEEE Transactions on Electron Devices, vol. 36, No. 9, pp. 1811-1823, Sep., 1989.
Bumgarner, Kong, and Kim, et al., "Monocrystalline .beta.-SiC Semiconductor Thin Films: Epitaxial Growth, Doping, and FET Device Development," 1988 Proceedings of the 38th Electronics Components Conf., pp. 342-349, 1988.
Daimon, Yamanaka, Shinohara, Sakuma, Misawa, Endo and Yoshida, "Operation of Schottky-Barrier Field Effect Transistors of 3C-SiC up to 400.degree. C.", Appl. Phys. Lett., vol. 51, pp. 2106-2108, Dec. 1987.
Kelner, Binari, Sleger and Kong, ".beta.-SiC MESFET's and Buried Gate JFET's", IEEE Electron Device Letters, vol. EDL-8, No. 9, pp. 428-430, Sep. 1987.
Kong, Palmour, Glass and Davis, "Temperature Dependence of the Current-Voltage Characteristics, of Metal-Semiconductor . . . Via Chemical Vapor Deposition", Appl. Phys. Lett., vol. 51, pp. 442-444, Aug., 1987.
Kelner, Binari, Sleger and Kong, ".beta.-SiC MESFETs", Mater. Res. Soc. Symp. Proc., vol. 97, p. 227-232, Sep., 1987.
Edmond, Palmour, and Davis, "Chemical Etching of Ion Implanted Amorphous Silicon Carbide," J. Electrochem. Soc.: Solid-State Science and Technology, pp. 650-652, Mar., 1986.
Sugiura, Lu, Cadien and Steckl, "Reactive Etching of SiC Thin Films Using Fluorinated Gases", J. Vac. Sci. Technology. B 4 (1), pp. 349-355, Jan.,-Feb., 1986.
Chang, Fang, Huong, and Wu, "Novel Passivation Dielectrics-The Boron-or Phosphorus-Doped Hydrogenated Amorphous Silicon Carbide Films", J. Electrochem. Soc.: Solid State Science and Technology, pp. 418-422, Feb., 1985.
McHargue, Lewis, Williams and Appleton, "The Reactivity of Ion-Implanted SiC", Materials Science and Engineering, vol. 69, pp. 391-395, 1985.
Palmour, Davis, Astell-Burt and Blackborow, "Effects of Cathode Materials and Gas Species on the Surface Characteristics of Dry Etched Monocrystalline Beta-SiC Thin Films", Silicon Carbide, pp. 491-500.

Affiliated with

Also associated with

Rating

Silicon carbide field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-954027