Silicon carbide fabrication

Details Silicon carbide fabrication Silicon carbide fabrication

1998-08-26

1999-11-30

Straub, Gary P.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423346, 502177, 502178, 117 95, C01B 3136, B01J 2722, B01J 27224, C30B 1300

Patent

active

059937700

ABSTRACT:
An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the internal structure between 4 to 12 .mu.m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40.

REFERENCES:
patent: 4990374 (1991-02-01), Keeley et al.
patent: 5093039 (1992-03-01), Kijima et al.
patent: 5200157 (1993-04-01), Toya et al.
patent: 5248385 (1993-09-01), Powell
patent: 5298467 (1994-03-01), Hurtado et al.
patent: 5374412 (1994-12-01), Pickering et al.
patent: 5407750 (1995-04-01), Kinoshita et al.
patent: 5465184 (1995-11-01), Pickering et al.
patent: 5612132 (1997-03-01), Goela et al.
patent: 5668188 (1997-09-01), Whinnery et al.

Affiliated with

Also associated with

Rating

Silicon carbide fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1667862