Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2004-08-19
2009-12-22
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257SE29004, C257SE29104, C438S931000
Reexamination Certificate
active
07635868
ABSTRACT:
Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.
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Hallin et al. “Homoepitaxial on-axis growth of 4H- and 6H-SiC by CVD” Materials Science Forum vols. 457-460 (2004) pp. 193-196.
Nakamura et al., “Surface Mechanisms in Homoepitaxial Growth on alpha-SiC {0001}-vicinal Faces;” Silicon Carbide and Related Materials; Material Science Forum; 2003; pp. 163-168.
Kojima et al., “4H-SiC Carbon-Face Epitaxial Layers Grown by Low Pressure Hot-Wall Chemical Vapor Deposition;” Material Science Forum; 2003; pp. 209-212; vols. 457-460; Trans Tech Publications; Switerland.
Kojima Kazutoshi
Kuroda Satoshi
Okumura Hajime
Fahmy Wael
Howson & Howson LLP
National Institute of Advanced Industrial Science and Technology
Salerno Sarah K
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