Silicon carbide epitaxial wafer, method for producing such...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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C257SE29004, C257SE29104, C438S931000

Reexamination Certificate

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07635868

ABSTRACT:
Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.

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patent: 2006/0011128 (2006-01-01), Ellison et al.
patent: 2003-137694 (2003-05-01), None
Steckl et al. (“Epitaxial Growth of B-SiC on Si by RTCVD with C3H8 and SiH4”; IEEE Transactions on Electron Devices vol. 39, No. 1, Jan. 1992 pp. 64-73).
Hallin et al. “Homoepitaxial on-axis growth of 4H- and 6H-SiC by CVD” Materials Science Forum vols. 457-460 (2004) pp. 193-196.
Nakamura et al., “Surface Mechanisms in Homoepitaxial Growth on alpha-SiC {0001}-vicinal Faces;” Silicon Carbide and Related Materials; Material Science Forum; 2003; pp. 163-168.
Kojima et al., “4H-SiC Carbon-Face Epitaxial Layers Grown by Low Pressure Hot-Wall Chemical Vapor Deposition;” Material Science Forum; 2003; pp. 209-212; vols. 457-460; Trans Tech Publications; Switerland.

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