Silicon carbide electronic device manufacturing method

Details Silicon carbide electronic device manufacturing method Silicon carbide electronic device manufacturing method

1995-03-01

1996-03-26

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437100, 437177, H01L 2128

Patent

active

055020038

ABSTRACT:
Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base, providing a stable electrode for which the contact resistance does not increase even when high temperatures are maintained. Bonding is facilitated when Au layer is formed on top of the Ni layer.

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