Silicon carbide diffusion tube for semi-conductor

Details Silicon carbide diffusion tube for semi-conductor Silicon carbide diffusion tube for semi-conductor

1989-05-03

1991-03-12

Seidleck, James

Stock material or miscellaneous articles

Hollow or container type article

Glass, ceramic, or sintered, fused, fired, or calcined metal...

427 51, 427237, 432253, 432258, F27D 500, B05D 314

Patent

active

049992287

ABSTRACT:
Disclosed is a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide having an iron concentration of 20 ppm or below and a density of 3.0 g/cm.sup.3 or over, and a silicon carbide layer consisting of a high-purity silicon carbide film having an iron concentration of 5 ppm or below deposited on the inner surface of the tube base and a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide, and a silicon carbide layer consisting of a Si-depleted layer formed in the inner wall of the reaction-sintered silicon carbide tube base and a high-purity silicon carbide film deposited on the Si-depleted layer, said silicon carbide film having a thickness of more than 0.5 mm.

REFERENCES:
patent: 3951587 (1976-04-01), Alliegro et al.
patent: 4382776 (1986-05-01), Kawase et al.
patent: 4459104 (1984-07-01), Wollmann
patent: 4761134 (1988-08-01), Foster

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