Silicon carbide carrier for wafer processing

Details Silicon carbide carrier for wafer processing Silicon carbide carrier for wafer processing

1994-08-08

1996-07-23

Watson, Robert C.

Work holders

Work-underlying support

Gapped support

211 41, B23Q 300

Patent

active

055382304

ABSTRACT:
A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

REFERENCES:
patent: 3486631 (1969-12-01), Rodman
patent: 4093201 (1978-06-01), Dietze et al.
patent: 5193682 (1993-03-01), Naito et al.
patent: 5318190 (1994-06-01), Mason

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