Silicon carbide bipolar semiconductor device with birdsbeak isol

Details Silicon carbide bipolar semiconductor device with birdsbeak isol Silicon carbide bipolar semiconductor device with birdsbeak isol

1991-12-10

1997-03-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 65, 257 70, 257353, 257526, H01L 29161, H01L 2973

Patent

active

056104111

ABSTRACT:
A semiconductor device is manufactured by forming an epitaxial layer (22) insulated from a silicon substrate (2), and forming a device in the epitaxial layer (22). On the semiconductor substrate (2), a silicon dioxide layer (4) is formed (FIG. 2A). Then the silicon dioxide layer (4) is provided with openings (14) (FIG. 2D). Silicon carbide is grown until it protrudes from the openings (14) to thereby form a silicon carbide seed crystal layer (16) (FIG. 2E). Next, oxidation is carried out, allowing a field oxide layer (20) to be connected at the portion under the openings (14) and the silicon carbide seed crystal layer (16) to be insulated from the silicon substrate (2). Thereafter, epitaxial growth is effected from the silicon carbide seed crystal layer (16). The growth is stopped before silicon grown layers (22) connect to one another, thus obtaining epitaxially grown layers (22) having regions which are separate from one another. The bipolar semiconductor device is formed in this epitaxially grown layer (22). The silicon carbide grown layer (22) is isolated from the silicon substrate (2) and formed as regions isolated from one another, having a uniform plane bearing.

REFERENCES:
patent: 4751561 (1988-06-01), Jastrzebski
"Lateral Epitaaxial Overgrowth of Silicon on SiO.sub.2 ", by D. D. Rathman et al, Journal of Electro-Chemical Society Solid-State Science and Technology, Oct., 1982, p. 2303.
"New SOI-Selective Nucleation Epitaxy", by Ryudai Yonehara et al. Preliminary Bulletin for the 48th Fall Academic Lecture 1987 by the Applied Physics Society, 19p-Q-15, p. 583.
Chaudry, M. I. et al. "Fabrication and Properties of Polycrystalline-SiC/Si structures of Si heterojunction devices", Appl. Phys. Lett., vol. 59, No. 1, (Jul., 1991), pp. 51-53.
"Bird's Beak Configuration of Isolation Oxide in Bipolar Technology", R. Lemme et al, Siemens AG, Integrated Circuit Division, Research Laboratories, Munich FRG; pp. 811-820.

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