Silicon carbide based porous material and method for...

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Reexamination Certificate

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C428S116000, C428S317700, C428S317900, C428S446000, C423S345000, C423S430000, C423S439000, C501S080000, C501S088000, C055S523000

Reexamination Certificate

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07452591

ABSTRACT:
A silicon carbide-based porous material characterized by comprising silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal; it is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, is very low in risk of having defects such as cuts (which cause leakage of fluid) and the like, as well as in pressure loss.

REFERENCES:
patent: 4777152 (1988-10-01), Tsukada
patent: 5326512 (1994-07-01), Stillwagon et al.
patent: 6180559 (2001-01-01), Roberts et al.
patent: 6582796 (2003-06-01), Joulin et al.
patent: 6764742 (2004-07-01), Ichikawa et al.
patent: 6773481 (2004-08-01), Noguchi et al.
patent: 6815038 (2004-11-01), Morimoto et al.
patent: 7011803 (2006-03-01), Ichikawa et al.
patent: 7037477 (2006-05-01), Tomita et al.
patent: 7244685 (2007-07-01), Furukawa et al.
patent: 2006/0121239 (2006-06-01), Furukawa et al.
patent: 0 322 998 (1989-07-01), None
patent: 0 575 038 (1993-12-01), None
patent: 1 364 930 (2003-11-01), None
patent: 06-182228 (1994-07-01), None
patent: 11-253722 (1999-09-01), None
patent: 2001-146473 (2001-05-01), None
patent: 2001-206785 (2001-07-01), None
patent: 2002-154882 (2002-05-01), None
patent: 2002-356384 (2002-12-01), None
patent: WO 01/53233 (2001-07-01), None
patent: WO 200179138 (2001-10-01), None

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