Silicon carbide and silicon bonded polycrystalline diamond body

Details Silicon carbide and silicon bonded polycrystalline diamond body Silicon carbide and silicon bonded polycrystalline diamond body

1978-01-09

1979-05-01

Arnold, Donald J.

Abrasive tool making process, material, or composition

With inorganic material

51295, 264332, B24D 304, B24D 310

Patent

active

041516869

ABSTRACT:
A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.

REFERENCES:
patent: 3239321 (1966-03-01), Blainey et al.
patent: 3574580 (1971-04-01), Stromberg et al.
patent: 3617347 (1971-11-01), Kuratomi
patent: 3912500 (1975-10-01), Vereschagin
patent: 3913280 (1975-10-01), Hall

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