Silicon carbide and related wide-bandgap transistors on semi...

Details Silicon carbide and related wide-bandgap transistors on semi... Silicon carbide and related wide-bandgap transistors on semi...

2007-06-18

2010-10-26

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S078000, C257S103000, C257S194000, C257S195000, C257S256000, C257SE29104

Reexamination Certificate

active

07821015

ABSTRACT:
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.

REFERENCES:
patent: 6303475 (2001-10-01), Suvorov et al.
patent: 7009209 (2006-03-01), Casady et al.
patent: 2002/0149021 (2002-10-01), Casady et al.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Search Authority, or the Declaration, International Patent Application No. PCT/US2007/71549, International Filing Date: Jun. 19, 2007, Mailing Date: Nov. 15, 2007.

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