Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having semi-insulating component
Reexamination Certificate
2005-12-19
2008-10-07
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having semi-insulating component
C438S917000, C438S931000, C117S951000, C257SE21111
Reexamination Certificate
active
07432171
ABSTRACT:
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more semiconducting devices are formed on the silicon carbide semi-insulating layer. The silicon carbide semi-insulating layer, which includes, for example, 4H or 6H silicon carbide, is formed using a compensating material, the compensating material being selected depending on preferred characteristics for the semi-insulating layer. The compensating material includes, for example, boron, vanadium, chromium, or germanium. Use of a silicon carbide semi-insulating layer provides insulating advantages and improved thermal performance for high power and high frequency semiconductor applications.
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Casady Jeffrey B.
Mazzola Michael
Butler Snow O'Mara Stevens & Cannada, PLLC
Mississippi State University Research and Technology Corporation
Wilczewski M.
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