Silicon carbide and other films and method of deposition

Details Silicon carbide and other films and method of deposition Silicon carbide and other films and method of deposition

2009-08-26

2011-11-01

Turner, Archene (Department: 1784)

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

C427S249100, C427S249150, C427S255170, C427S255180, C427S255230, C427S255260, C427S255393, C427S577000

Reissue Patent

active

RE042887

ABSTRACT:
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

REFERENCES:
patent: 4532150 (1985-07-01), Endo et al.
patent: 4560589 (1985-12-01), Endou et al.
patent: 4855254 (1989-08-01), Eshita et al.
patent: 4971851 (1990-11-01), Neukermans et al.
patent: 5162133 (1992-11-01), Bartha et al.
patent: 5188706 (1993-02-01), Hori et al.
patent: 5254370 (1993-10-01), Nagasawa et al.
patent: 5296258 (1994-03-01), Tay et al.
patent: 5390626 (1995-02-01), Nagasawa et al.
patent: 5415126 (1995-05-01), Loboda et al.
patent: 5541023 (1996-07-01), Kondo et al.
patent: 5616426 (1997-04-01), Tenhover et al.
patent: 5698261 (1997-12-01), Ivanov et al.
patent: 5800878 (1998-09-01), Yao
patent: 6103590 (2000-08-01), Swanson et al.
patent: 6127068 (2000-10-01), Shoki et al.
patent: 6189766 (2001-02-01), Baker et al.
patent: 0445319 (1991-09-01), None
Zorman et al., “Deposition of Polycrystalline 3C-SiC Films on 100 mm Diameter Si(100) Wafers in a Large-Volume LPCVD Furnace”, “Electrochemical and Solid-State Letters”, 2002, pp. G99-G101, vol. 5, No. 10, Publisher: The Electrochemical Society, Inc., Published in: US.
Sarro et al., “Low-stress PECVD SiC thin films for IC-compatible microstructures”, “Sensors and Actuators A: Physical”, 1998, pp. 175-180, Publisher: Elsevier Science S.A.
Yamaguchi et al., “Properties of heteroepitaxial 3C-SiC films grown by LPCVD”, “Science Direct Sensors and Actuators A”, Jun. 1996, pp. 695-699, vol. 54, No. 1-3, Publisher: Elsevier B.V.
Temple-Boyer et al., “Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia”, “Journal of Vacuum Science Technology”, Jul./Aug. 1998, pp. 2003-2007, vol. 16, No. 4, Publisher: American Vacuum Society, Published in: US.
Hurtos et al., “Residual stress and texture in poly-SiC films grown by low-pressure organometallic chemical-vapor deposition”, “Journal of Applied Physics”, Feb. 15, 2000, pp. 1748-1758, vol. 87, No. 4, Publisher: American Institute of Physics, Published in: US.
Kobayashi et al., “SiC Mask Membrane for Synchrotron Radiation Lithography”, “Microelectronic Engineering ”, 1990, pp. 237-240, vol. 11, Publisher: Elsevier Science Publishers B.V.
Zorman et al., “6.2: Silicon Carbide for MEMS and NEMS—An Overview”, “Sensors, 2002, Proceedings of IEEE”, 2002, pp. 1109-1114, vol. 2, Publisher: IEEE, Published in: US.
Sekimoto et al., “Silicon nitride single-layer x-ray mask”, “Journal of Vacuum Science Technology”, Nov./ Dec. 1982, pp. 1017-1021, vol. 21, No. 4, Publisher: American Vacuum Society, Published in: US.
Toal et al., “Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD”, “Thin Solid Films 343-344”, 1999, pp. 292-294, Publisher: Elsevier Science S.A.
Hwang, J-D et al, “Epitaxial Growth and Electrical Characteristics of Beta-SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition.” Japanese Journal of Applied Physics. Tokyo, JP, vol. 34, No. 3, Part 1, Mar. 1995, pp. 1447-1450. XP-000703002.
Sarro, P.M. et al,.; “Low-Stress PECVD SiC thin films for IC-compatible microstructures.” Sensors and Actuators A, Elsevier Sequoia S.A., Lausane, CH, vol. 67, No. 1-3, May 15, 1998, pp. 175-180.
Search Report for PCT/US2004/037064, published Sep. 12, 2005.

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