Silicon carbide and other films and method of deposition

Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...

Reexamination Certificate

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C427S249100, C427S249150, C427S255170, C427S255230, C427S255390

Reexamination Certificate

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10716006

ABSTRACT:
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

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Search Report for PCT/US2004/037064, published Sep. 12, 2005.

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