Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2001-06-15
2009-11-03
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257SE27053, C257SE27055
Reexamination Certificate
active
07612430
ABSTRACT:
The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer (106).
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Franosch Martin
Meister Thomas
Schäfer Herbert
Stengl Reinhard
Wolf Konrad
Altera Law Group LLC
Infineon - Technologies AG
Wilson Allan R.
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