Silicon-based ultra-violet LED

Details Silicon-based ultra-violet LED Silicon-based ultra-violet LED

2005-03-22

2005-03-22

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S025000, C438S028000, C438S029000, C438S046000, C438S047000, C257S013000, C257S079000, C257S103000, C257S749000, C257S918000

Reexamination Certificate

active

06869814

ABSTRACT:
A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on the opposite side. The insulating layer defines microcavities therein, the microcavities having sharp tips on their inner surfaces. The microcavities have gas inside. A second conductive layer is disposed over the insulating layer. When an electrical potential is applied between the conductive layers, the gas-filled microcavities act as plasma discharge lamps, emitting light. The light may be in the ultraviolet portion of the spectrum. The method includes etching a substrate to produce a porous insulating layer on one side, depositing a first conductive layer on the opposite side, and depositing a second conductive layer over the insulating layer. The microcavities in the insulating layer are then filled with gas.

REFERENCES:
patent: 6157047 (2000-12-01), Fujita et al.
patent: 6695664 (2004-02-01), Eden et al.
patent: 20030080688 (2003-05-01), Elden et al.

Affiliated with

Also associated with

Rating

Silicon-based ultra-violet LED does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-based ultra-violet LED, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-based ultra-violet LED will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3448756