Silicon-based ultra-violet LED

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S024000, C438S025000, C438S028000, C438S029000, C438S046000, C438S047000, C257S013000, C257S079000, C257S103000, C257S749000, C257S918000

Reexamination Certificate

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06869814

ABSTRACT:
A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on the opposite side. The insulating layer defines microcavities therein, the microcavities having sharp tips on their inner surfaces. The microcavities have gas inside. A second conductive layer is disposed over the insulating layer. When an electrical potential is applied between the conductive layers, the gas-filled microcavities act as plasma discharge lamps, emitting light. The light may be in the ultraviolet portion of the spectrum. The method includes etching a substrate to produce a porous insulating layer on one side, depositing a first conductive layer on the opposite side, and depositing a second conductive layer over the insulating layer. The microcavities in the insulating layer are then filled with gas.

REFERENCES:
patent: 6157047 (2000-12-01), Fujita et al.
patent: 6695664 (2004-02-01), Eden et al.
patent: 20030080688 (2003-05-01), Elden et al.

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