Silicon-based thin-film photoelectric converter and method...

Details Silicon-based thin-film photoelectric converter and method... Silicon-based thin-film photoelectric converter and method...

2011-06-14

2011-06-14

Michener, Jennifer K. (Department: 1728)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S252000, C136S255000, C136S258000, C438S056000, C438S096000, C438S097000, C257S055000, C257S431000, C257S458000, C257S464000

Reexamination Certificate

active

07960646

ABSTRACT:
In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOxlayer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOxlayer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOxlayer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.

REFERENCES:
patent: 5824566 (1998-10-01), Sano et al.
patent: 6333456 (2001-12-01), Yanagimachi
patent: 2006/0043517 (2006-03-01), Sasaki et al.
patent: 1650812 (2006-04-01), None
patent: 2003-258279 (2003-09-01), None
patent: 2005-045129 (2005-02-01), None
patent: WO-2005/011001 (2005-02-01), None
patent: WO-2005/011002 (2005-03-01), None
Banerjee et al., Reduction in thickness of N-type Microcrystalline Hydrogenated Silicon Film using Different Types of Seed Layer, Japan Journal of Applied Physics, 2002.
Rossi et al., “Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescencs”, Applied Surface Science, 1996.
Ichikawa et al.,“12% Two-Stacked a-Si:H Tandem Cells with a New P-Layer Structure”, Photovoltaic Specialists Conference, Oct. 7-11, 1991, vol. 2, pp. 1296-1301.
Mohammad et al.,“Photovoltaic, I-V and C-V Characteristics of SnO2/SiO2/a-Si:H/mc-Si:H Structures”. Japanese Journal of Applied Physics, vol. 29 (1990), Part 2, No. 11, Nov. 20, 1990, pp. L2080-L2081.
Chandan et al.,“Reduction of Thickness of N-Type Microcrystalline Hydrogenated Silicon Oxide Film Using Different Types of Seed Layer” Japanese Journal of Applied Physics, vol. 41 (2002), Part 2, No. 7A, Jul. 1, 2002, pp. L787-L789.

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