Silicon-based thin film forming apparatus, silicon-based...

Details Silicon-based thin film forming apparatus, silicon-based... Silicon-based thin film forming apparatus, silicon-based...

2005-05-24

2005-05-24

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S461000, C257S463000, C438S057000, C438S059000, C438S060000, C438S098000

Reexamination Certificate

active

06897559

ABSTRACT:
There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm±5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm±5 mm.

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