Silicon-based strain-symmetrized GE-SI quantum lasers

Details Silicon-based strain-symmetrized GE-SI quantum lasers Silicon-based strain-symmetrized GE-SI quantum lasers

1997-12-04

2000-11-28

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 44, 372 43, 372 50, 257 18, 257 19, 257191, H01S 319, H01L 2906

Patent

active

061544752

ABSTRACT:
A family of lasers is provided which can be readily grown upon silicon wafer platforms, each laser having a highly doped stably strained SiGe or Ge collector layer formed upon a SiGe graded relaxed buffer layer in turn grown on the Si wafer, and an intrinsic strain-symmetric Ge--Si superlattice covered by a heavily doped stably strained SiGe emitter. The superlattice has numerous thin 8-15 atomic monolayers of interleaved Ge and Si atoms, enabling high stack heights.

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