Silicon based sensor apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

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Details

257414, 257469, 204411, 204421, 204432, 340634, H01L 2358

Patent

active

056252099

ABSTRACT:
A biomedical sensor (20) is formed on a semiconductor substrate (22). Insulated dielectric layers (23, 24) are formed on the face and backside of the semiconductor substrate (22). Metal leads (26, 28) contact the substrate (22) through openings in the dielectric layer (23). The leads (26, 28) are also each connected to a set of interleaved longitudinal contact fingers (27, 29). A pair of contacts (30, 32) are formed on the opposite side of the substrate (22) from the contact figures (27, 29). A conductive biologic sample is placed over the interleaf fingers (27, 29), electrical measurements can be made through backside contacts (30, 32) so resistance measurements can be taken.

REFERENCES:
patent: 4180771 (1979-12-01), Guckel
patent: 4505799 (1985-03-01), Baxter
patent: 4592824 (1986-06-01), Smith et al.
patent: 4636827 (1987-01-01), Rudolf
patent: 5457333 (1995-10-01), Fukui

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