Silicon-based semiconductor photodetector with an improved optic

Details Silicon-based semiconductor photodetector with an improved optic Silicon-based semiconductor photodetector with an improved optic

1997-09-22

1999-12-07

Sanghavi, Hemang

Optical waveguides

With optical coupler

Particular coupling structure

385 52, 385 88, 257432, G02B 630

Patent

active

059996757

ABSTRACT:
The present invention provides a semiconductor photodetector formed over a substrate and being positioned adjacent to an optical fiber guiding groove also formed in said substrate bounding structure, said semiconductor photodetector having an optical waveguide layer including an optical absorption layer, wherein an edge portion of said optical waveguide layer is bounded to a side portion of said optical fiber guiding groove through an insulation layer having an refractive index higher than any parts of said optical waveguide layer.

REFERENCES:
patent: 4210923 (1980-07-01), North et al.
patent: 4294510 (1981-10-01), Chappell
patent: 5747860 (1998-05-01), Sugiyama et al.
M. Sugiyama et al., "A selective epitaxial SiGe/Si planar photodetector for Si-based OEICs", pp. 22.7.2-22.7.4, IEEE, 1995.

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