Silicon-based semiconductor devices

Details Silicon-based semiconductor devices Silicon-based semiconductor devices

1980-06-25

1982-11-16

Andrews, R. L.

Chemistry: electrical and wave energy

Processes and products

204 38R, 204129, 204130, 136258, 427 70, 427 84, C25D 712, C25D 550

Patent

active

043593674

ABSTRACT:
A new silicon based semiconductor device comprises a layer of amorphous silicon in which the density of energy states in the energy gap has been reduced by hydrogenation; this layer is deposited on a layer of a hydrogen-containing substrate material that can supply hydrogen in atomic form to the amorphous silicon. In processes of the invention the silicon layer and a substrate layer are hydrogenated separately to permit optimum hydrogenation; the silicon layer may be deposited without hydrogenation and hydrogenated subsequently with hydrogen from the substrate material. A specific example consists of a layer of hydrogenated amorphous silicon of about 1 micrometer thickness deposited on a hydrogen-containing chromium layer which is itself deposited on a carrier, the silicon then forming the active element of a photovoltaic cell particularly functional as a solar cell.

REFERENCES:
patent: 4265720 (1981-05-01), Winstel
"Cathodic Deposition of Amorphous Si from Solutions of Silicic Acid and Tetraethyl Ortho-Silicate in Ethylene Glycol & Fermamide Containing HF", Mohan et al., Electrochem. Acta., vol. 27, #3, pp. 371-377, 1982.
"Hydrogenated Amorphous Si Films in Pd Schottky Barrier Cells", Carlson et al., Solar Cells, 1 (1979/80), 371-379.

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