Silicon based nanoscale crossbar memory

Details Silicon based nanoscale crossbar memory Silicon based nanoscale crossbar memory

2009-10-20

2011-12-06

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE47001, C257SE21575, C438S128000

Reexamination Certificate

active

08071972

ABSTRACT:
The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials.

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