Silicon based mass airflow sensor and its fabrication method

Details Silicon based mass airflow sensor and its fabrication method Silicon based mass airflow sensor and its fabrication method

1987-12-23

1989-12-26

Goldstein, Herbert

Measuring and testing

Volume or rate of flow

Thermal type

G01F 168

Patent

active

048889881

ABSTRACT:
A mass airflow sensor is fabricated on a semiconductor substrate and which includes (1) a dielectric diaphragm, (2) p-etch-stopped silicon rim, (3) thin-film heating and temperature sensing elements, and (4) tapered chip edges. The dielectric diaphragm is formed with thin silicon oxide and silicon nitride in a sandwich structure and provides excellent thermal insulation for the sensing and heating elements of the sensor. The diaphragm dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim to help ensure uniform and reproducible sensor performance.

REFERENCES:
patent: 3767494 (1973-10-01), Muraoka et al.
patent: 4091169 (1978-05-01), Bohg et al.
patent: 4227975 (1980-10-01), Hartman et al.
patent: 4239599 (1980-12-01), Ito
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4320655 (1982-03-01), Kammermaier et al.
patent: 4348546 (1982-09-01), Little
patent: 4372803 (1983-02-01), Gigante
patent: 4420872 (1983-12-01), de Zaldivar
patent: 4471647 (1984-09-01), Jerman et al.
patent: 4472239 (1984-09-01), Johnson et al.
patent: 4478076 (1984-10-01), Bohrer
patent: 4478077 (1984-10-01), Bohrer et al.
patent: 4501144 (1985-02-01), Higashi et al.
patent: 4542650 (1985-09-01), Renken et al.
patent: 4548078 (1985-10-01), Bohrer et al.
patent: 4581928 (1986-04-01), Johnson
patent: 4594889 (1986-07-01), McCarthy
patent: 4614119 (1986-09-01), Zavracky et al.
patent: 4624137 (1986-11-01), Johnson et al.
patent: 4624138 (1986-11-01), Ono et al.
patent: 4633578 (1987-01-01), Aine et al.
patent: 4651564 (1987-03-01), Johnson et al.
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 4680963 (1987-07-01), Tabata et al.
patent: 4682503 (1987-07-01), Higashi et al.
patent: 4683159 (1987-07-01), Bohrer et al.
patent: 4685331 (1987-08-01), Renken et al.
SAE Technical Paper, "Silicon Micromachining Technology For Automotive Applications", K. W. Lee and B. E. Walker.

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