Silicon-based light-emitting structure

Details Silicon-based light-emitting structure Silicon-based light-emitting structure

2006-04-13

2008-12-09

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S091000, C257S095000

Reexamination Certificate

active

07462874

ABSTRACT:
A silicon-based light emitting structure is formed as a high density array of light-emitting p-n junctions that substantially increases the intensity of the light emitted in a planar region. The p-n junctions are formed using standard CMOS processing methods, and emit light in response to applied voltages that generate avalanche breakdown and an avalanche current.

REFERENCES:
patent: 5448082 (1995-09-01), Kim
patent: 6107644 (2000-08-01), Shakuda et al.
patent: 6809340 (2004-10-01), Kato et al.
patent: 7154124 (2006-12-01), Han et al.
patent: 7375383 (2008-05-01), Nakamura et al.
U.S. Appl. No. 10/838,499, filed May 3, 2004, Padmanabhan et al.
Lukas W. Snyman, et al., “A Dependency Of Quantum Efficiency Of Silicon CMOS n+pp+LEDs On Current Density”, IEEE Photonics Technology Letters, vol. 17, No. 10, Oct. 2005, pp. 2041-2043.

Affiliated with

Also associated with

Rating

Silicon-based light-emitting structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-based light-emitting structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-based light-emitting structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4032996