Silicon-based light emitting diode

Details Silicon-based light emitting diode Silicon-based light emitting diode

2006-02-14

2006-02-14

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C438S022000

Reexamination Certificate

active

06998643

ABSTRACT:
A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.

REFERENCES:
patent: 5229627 (1993-07-01), Kosaka
patent: 1020020023117 (2002-03-01), None
Applied Physics Letters, vol. 77, No. 4, Jul. 24, 2000, pp. 522-524.

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