Silicon based light emitting devices

Details Silicon based light emitting devices Silicon based light emitting devices

1986-06-30

1989-05-02

Davie, James W.

357 17, 357 63, H01L 2724

Patent

active

048273180

ABSTRACT:
An efficient solid state light emitting device wherein sulphur is used to provide isoelectronic centers in silicon which bind excitons which emit light at a wavelength of 1.32 microns (um) and are particularly adapted for use in integrated opto-electronic circuits and in launching optical signals in single mode optical fibers.

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J. Weber et al., "Near Band-Gap Photoluminescence From Sulfur-Doped Silicon Samples", J. Appl 56(12) 15 Dec. 1984, pp. 3518-3520.
Wolfe et al., Sc. Amer., 250, 3, 98, Mar. 1984.
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Mitchard et al. Sol. St. Comm, 29, 425-429, 1979.
Watkins, et al., Phys. Rev. B, 29, 10, 5727, May 1984.
Henry, J. Phys C: Solid State Phys, 14, (1981) L255-261.
Brown et al. J. Appl. Phys., 59(4), Feb. 1986, pp. 1399-1401, Not Prior Art to This Invention.
Ennen et al., Appl. Phys. Ltr., 46, 381 (1985).

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