Silicon-based functional matrix substrate and optical integrated

Details Silicon-based functional matrix substrate and optical integrated Silicon-based functional matrix substrate and optical integrated

1998-08-28

2000-08-08

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257 49, 257 51, 257636, 428210, H01L 2904, H01L 31036, H01L 2358

Patent

active

061005789

ABSTRACT:
An optical integrated oxide device uses a silicon-based functional matrix substrate on which both an oxide device and a semiconductor light emitting device can be commonly integrated with an optimum structure and a high density. A single-crystal Si substrate has formed on its surface a first region where a cleaned surface of the single-crystal Si substrate itself appears, and a second region in which a CeO.sub.2 thin film is preferentially (100)-oriented or epitaxially grown on the single-crystal Si substrate. A semiconductor laser is integrated in the first region by epitaxial growth or atomic layer bonding, and an optical modulation device or optical detection device made of oxides are formed in the second region, to make up an optical integrated oxide device. A MgAl.sub.2 O.sub.4 thin film may be used instead of CeO.sub.2 thin film.

REFERENCES:
patent: 4479297 (1984-10-01), Mizutani et al.
patent: 5834803 (1998-11-01), Nashimoto

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