Silicon-based dielectric tunneling emitter

Details Silicon-based dielectric tunneling emitter Silicon-based dielectric tunneling emitter

2005-06-07

2005-06-07

Patel, Nimeshkumar D. (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

C445S049000, C445S051000, C438S020000, C427S099300, C427S077000, C257S010000, C257S011000, C313S309000, C313S311000, C313S336000, C313S495000, C313S497000

Reexamination Certificate

active

06902458

ABSTRACT:
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

REFERENCES:
patent: 4303930 (1981-12-01), VanGorkom
patent: 4516146 (1985-05-01), Shannon et al.
patent: 5090932 (1992-02-01), Dieumegard et al.
patent: 5414272 (1995-05-01), Watanabe et al.
patent: 5473218 (1995-12-01), Moyer
patent: 5554859 (1996-09-01), Tsukamoto et al.
patent: 5557596 (1996-09-01), Gibson et al.
patent: 5559342 (1996-09-01), Tsukamoto et al.
patent: 5696385 (1997-12-01), Song
patent: 5702281 (1997-12-01), Huang
patent: 5726524 (1998-03-01), Debe
patent: 5760417 (1998-06-01), Watanabe et al.
patent: 5814832 (1998-09-01), Takeda et al.
patent: 5982091 (1999-11-01), Konishi
patent: 6008576 (1999-12-01), Nakatani et al.
patent: 6011356 (2000-01-01), Janning et al.
patent: 6023124 (2000-02-01), Chuman et al.
patent: 6034479 (2000-03-01), Xia
patent: 6064149 (2000-05-01), Raina
patent: 6084245 (2000-07-01), Hsu et al.
patent: 6096570 (2000-08-01), Hattori
patent: 6107732 (2000-08-01), Tolt
patent: 6137212 (2000-10-01), Liu et al.
patent: 6166487 (2000-12-01), Negishi
patent: 6229758 (2001-05-01), Agata
patent: 6249080 (2001-06-01), Komoda
patent: 6255185 (2001-07-01), Coolbaugh et al.
patent: 6329745 (2001-12-01), Patterson
patent: 6400070 (2002-06-01), Yamada et al.
patent: 6445124 (2002-09-01), Asai
patent: 6469425 (2002-10-01), Sakai
patent: 0989577 (2000-03-01), None
patent: 1003195 (2000-05-01), None
patent: 1094485 (2001-04-01), None
patent: 2001118489 (2001-04-01), None
patent: 2001118500 (2001-04-01), None
Kusunoki, T et al, “Increasing Emission Current from MIM Cathodes by Using IR-PE-AU Multilayer Top Electrode”, IEEE Transactions on Electron Devices, V. 47, No. 8, Aug. 2000, pp 1667-1672.

Affiliated with

Also associated with

Rating

Silicon-based dielectric tunneling emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-based dielectric tunneling emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-based dielectric tunneling emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3484583