Silicon base CCD-bipolar transistor compatible methods and produ

Details Silicon base CCD-bipolar transistor compatible methods and produ Silicon base CCD-bipolar transistor compatible methods and produ

1977-11-28

1979-05-01

Ozaki, G.

Metal treatment

Stock

Ferrous

29571, 29569L, 29577C, 148 15, 148 33, 148187, 357 35, 357 44, H01L 2710

Patent

active

041527151

ABSTRACT:
CCDs and bipolar transistors are formed together on a silicon chip. For n channel CCDs and npn transistors, only a single extra diffusion is necessary in addition to the diffusions used for the CCDs alone. This step is diffusion of n.sup.+ collector wells, and is performed before CCD channel stop-transistor base diffusion. For p channel CCDs and pnp transistors, two extra diffusions are necessary and are: diffusion of a p collector wells, and diffusion of n.sup.+ base contracts; the extra diffusions may both be performed before CCD channel stop-transistor base diffusion, or the n.sup.+ base contact diffusion may be performed thereafter.

REFERENCES:
patent: 3930893 (1976-01-01), Tchon
patent: 3981072 (1976-09-01), Buie
patent: 4047215 (1977-09-01), Frye et al.
patent: 4047220 (1977-09-01), Ferro et al.
Grant et al., "Integrated CCD-Bipolar Structure for Focal Plane Processing f IR Signals", 1975 International Conference on the Application of Charge-Coupled Devices, Naval Electronics Laboratory Center, San Diego, Calif., Oct. 29-31, 1975, pp. 53-58.

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