Silicon avalanche photodiode array

Details Silicon avalanche photodiode array Silicon avalanche photodiode array

1990-03-26

1991-06-04

James, Andrew J.

357 13, 357 19, H01L 2714, H01L 2990, H01L 3112

Patent

active

050218549

ABSTRACT:
A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.

REFERENCES:
patent: 4042454 (1977-08-01), Haas et al.
patent: 4129878 (1978-12-01), Webb
patent: 4317091 (1982-02-01), Dahlberg
patent: 4383267 (1983-05-01), Webb
patent: 4403397 (1983-09-01), Bottka et al.
patent: 4458260 (1984-07-01), McIntyre et al.
patent: 4654678 (1987-03-01), Lightstone et al.
Gelezunas et al., "Uniform Large-Area High-Gain Silicon Avalanche Radiation Detectors From Transmutation Doped Silicon", Applied Physics Letters, vol. 30, No. 2, Jan. 15, 1977.

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