Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2000-03-17
2002-05-28
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S627000, C257S773000
Reexamination Certificate
active
06396120
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to silicon antifuse (AF) structures that will use a field enhanced region having a substantially reduced oxide thickness and, more particularly, to using the reduced oxide thickness to allow AF programming at burn-in voltages which do not damage standard Complementary Metal Oxide Semiconductor (CMOS) logic.
2. Background Description
AF technology through the use of dielectric breakdown is well understood. U.S. Pat. No. 5,250,459, issued to Lee and entitled “Electrically Programmable Low Resistive Antifuse Element” illustrates this concept. In order to ensure AF programming (i.e., in going from a high impedance state to a low impedance state, a dielectric layer between two conductors is damaged, and a conductive filament between the two conductors is formed), the usual practice to form the filament is to damage a gate oxide layer between the two conductors. This presents a problem in that the voltage/current required to program the AF must pass through standard CMOS logic without damaging it. In addition, the voltage must generally be generated on-chip since it cannot be passed through an active electrostatic discharge (ESD) protected pin (which would typically trigger), nor can it pass on a no-connect due to Joint Electron Device Engineering Council (JEDEC) specification limitations. One solution, as described in U.S. Pat. No. 5,691,217, issued to Micron Technology, Inc., and entitled “Semiconductor Processing Method of Forming a Pair of Field Effect Transistors”, is to form a pair of field effect transistors having different thickness gate dielectric layers, which is a costly and complicated process.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide silicon structures that will use a field enhanced region where the oxide thickness is substantially reduced to allow AF programming at burn-in voltages which do not damage the standard CMOS logic.
In one embodiment, the structure comprises a substrate that has a raised protrusion terminating at a substantially sharp point, and an insulator over the raised protrusion sufficiently thin to be breached by a breakdown voltage applied to the sharp point. A region comprised of a material is formed on the insulator over the raised protrusion for becoming electrically coupled to the substrate after the insulator is breached by the breakdown voltage. Finally, the structure also has a contact for supplying the breakdown voltage to the substrate.
In a second embodiment, the semiconductor device comprises a substrate having a trough formed in a top surface of the substrate, a relatively thick insulator layer over the top surface of the substrate, and a relatively thin insulator layer over the trough that is breached by a breakdown voltage applied to the trough. A region comprised of a material on the relatively thin insulator layer over the trough is also provided, which becomes electrically coupled the substrate after the relatively thin insulator layer is breached by the breakdown voltage. Finally, a contact is provided for supplying the breakdown voltage to the substrate.
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Bertin Claude L
Furukawa Toshiharu
Hedberg Erik L.
Mandelman Jack A.
Tonti William R.
Chadurjian Mark F.
International Business Machines - Corporation
Whitham Curtis & Christofferson, P.C.
Wojciechowicz Edward
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