Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Patent
1997-10-21
2000-02-08
Dutton, Brian
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
H01L 21322
Patent
active
060227931
ABSTRACT:
A novel method of generating intrinsic gettering sites in epitaxial wafers employs co-implanting silicon and oxygen into a substrate of the wafer, annealing the substrate at a low temperature, and then depositing the epitaxial layer on a surface of the substrate. The epitaxial deposition acts as an in-situ anneal to form dislocation loops that act as gettering sites. Oxygen precipitate clusters form during the method, which clusters act to anchor the dislocation loops and prevent them from gliding to the wafer surface over time.
REFERENCES:
patent: 4401506 (1983-08-01), Otsuka
patent: 4523963 (1985-06-01), Ohta et al.
patent: 4561171 (1985-12-01), Schlosser
patent: 4885257 (1989-12-01), Matsushita
patent: 5286658 (1994-02-01), Shirakawa et al.
patent: 5306939 (1994-04-01), Mitani et al.
patent: 5389551 (1995-02-01), Kamakura et al.
patent: 5432121 (1995-07-01), Chan et al.
patent: 5534294 (1996-07-01), Kubota et al.
patent: 5611855 (1997-03-01), Wijaranakula
patent: 5734195 (1998-03-01), Takizawa et al.
"Electrical and Crystallographic Evaluation of SOS Implanted with Silicon and/or Oxygen", Y. Yamamoto et al., vol. B7/8, No. 1, Part 1, Mar. 1985, pp. 273-277.
Hydrogen-Induced Defects in Silicon by CF.sub.4 /.times.%H.sub.2 (0<.times.<100) RIE and H.sub.2 Plasma, Shwu-Jen Jeng et al., Mat. Res. Soc. Symp. Proc., vol. 104, 1988, pp. 247-252.
Implantation Gettering in Silicon, S. S. Gong et al., Solid-State Electronics, vol. 30, No. 2, 1987, pp. 209-211.
Defects in Oxygen Implanted Silicon, Supapan Seraphin, Solar Energy Materials and Solar Cells, 1994, pp. 343-349.
A Systematic Analysis of Defects in Ion-Implanted Silicon, K. S. Jones et al., Appl. Phys. A, 1988, pp. 1-34.
Materials Science Reports, 6 (1991) pp. 275-366, R. J. Schreutelkamp et al., "Pre-amorphization damage in Ion-implanted Silicon".
Nucl. Instr. And Meth. In Phys. Res. B., 106 (1995), pp. 424-428, J. Wong-Leung et al., "Diffusion and trapping of Au to cavities induced by H-implantation in Si".
Inst. Phys. Conf. Ser. No. 146, Paper presented at Microsc. Semicond. Mater. Conf., pp. 20-23, Mar. 1995, M. Follstaedt et al., "Formation of cavities in Si and their chemisorption of metals".
Second International Autumn Meeting Proceedings: Gettering and Defect Engineering in Semiconductor Technology (GADEST '87), J. Dziesiaty et al., "Improved SI-EPI-Wafers By Buried Damage Layer for Extrinsic Gettering" (1987).
IBM Technical Disclosure Bulletin, vol. 17, No. 12, May 1975, T. Nagasaki et al., Gettering Technique And Structure.
J. Appl. Phys., 76(4), Aug. 15, 1994, G. Galvagno et al., "Al-O Interactions In Ion-Implanted Crystalline Silicon".
Appl. Phys. Lett., 50(15), Apr. 13, 1987, David H. Weiner et al., "Oxygen Implantation For Internal Gettering And Reducing Carrier Lifetime".
Proceedings 1995 IEEE International SOI Conference, Oct. 1995, J. Jablonski et al., "Gettering Layer Formation In Low-Dose SIMOX Wafers".
Proceedings of the Fifth International Symposium on Silicon-on-Insulator Technology and Devices; pp. 416-422, H. D. Chiou et al., "Gettering Of Bonded SOI Layers" (1992).
Mat. Res. Soc. Symp. Proc., vol. 396, 1996, Jianming Li et al., "Properties Of Silicon-On-Defect-Layer Material".
Ravi Jallepally
Tate Naoto
Wijaranakula Witawat
Dutton Brian
SEH America Inc.
LandOfFree
Silicon and oxygen ion co-implantation for metallic gettering in does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon and oxygen ion co-implantation for metallic gettering in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon and oxygen ion co-implantation for metallic gettering in will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1680922