Silicon accelerometer fabrication method

Details Silicon accelerometer fabrication method Silicon accelerometer fabrication method

1993-01-28

1994-10-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

73517R, 437901, 257254, 257418, H01L 21465

Patent

active

053526350

ABSTRACT:
A silicon accelerometer comprising a substrate, one or more pairs of beams, a pedestal, a mass on top of the pedestal and a cavity beneath the pedestal all of which is formed by a single-sided processing method. The pedestal is suspended over the cavity by the beams which provides the only support for the pedestal. The beams are supported by the substrate. The main steps of fabricating this structure comprise diffusion or ion implantation and epitaxial growth to form a buried high donor concentration layer on the surface of the substrate, chemical vapor deposition and photoetching to expose a portion of the edge of the buried layer to the ambiente, anodization to convert the high donor concentration layer into porous silicon and selectively etching to remove the porous silicon.

REFERENCES:
patent: 4430895 (1984-02-01), Colton
patent: 4598585 (1986-07-01), Boxenhorn
patent: 4718275 (1988-01-01), Norling et al.
patent: 4736629 (1988-04-01), Cole
patent: 4766768 (1988-08-01), Norling et al.
patent: 4805456 (1989-02-01), Howe et al.
patent: 4893509 (1990-01-01), MacIver et al.
patent: 4922756 (1990-05-01), Henrion
patent: 4945765 (1990-08-01), Roszhart
patent: 4969359 (1990-11-01), Mikkor
patent: 4981552 (1991-01-01), Mikkor
patent: 4995954 (1991-02-01), Guilinger et al.
patent: 5095762 (1992-03-01), Holm-Kennedy et al.
patent: 5121633 (1992-06-01), Murakami et al.
patent: 5242863 (1993-09-01), Tu et al.
Article: G. A. MacDonald, "A Review of Low Cost Accelerometers for Vehicle Dynamics," Sensors and Actuators, A21-A23 (1990) 303-307.

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