Silicided base structure for high frequency transistors

Details Silicided base structure for high frequency transistors Silicided base structure for high frequency transistors

2010-07-29

2011-12-27

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S166000, C257S198000, C257S587000, C257SE29188

Reexamination Certificate

active

08084786

ABSTRACT:
High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. Emitter, base and collector regions are formed in or on a semiconductor substrate. The emitter contact has a portion that overhangs a portion of the extrinsic base contact, thereby forming a cave-like cavity between the overhanging portion of the emitter contact and the underlying regions of the extrinsic base contact. When the emitter contact and the extrinsic base contact are silicided, some of the metal atoms forming the silicide penetrate into the cavity so that the highly conductive silicided extrinsic base contact extends under the edge of the emitter contact closer to the base itself, thereby reducing Rbx. Smaller Rbx provides transistors with higher fMAX.

REFERENCES:
patent: 7691716 (2010-04-01), Ho et al.
patent: 2005/0054172 (2005-03-01), Feng et al.
patent: 2005/0079726 (2005-04-01), Chen et al.
patent: 2005/0218399 (2005-10-01), Magnee et al.
patent: 2005/0236645 (2005-10-01), Khater et al.
patent: 2006/0081934 (2006-04-01), Khater et al.
patent: 2007/0126080 (2007-06-01), Wallner et al.
patent: 2007/0278539 (2007-12-01), Dyson et al.
patent: 2010/0001319 (2010-01-01), Pelouard et al.
patent: 2010/0078623 (2010-04-01), Feng et al.
Washio, K.,et al., Self-Aligned Metal/IDP Si Bipolar Technology wotj 12-ps PCL amd 45-GHz Dynamc Frequency Divider, IEEE Transactions on Electron Devices, vol. 44, No. 11, Nov. 1997 pp. 2078-2082.
Nai, T., et al., 12-ps ECL Using Low-Base-Resistance Si Bipolar Transistor by Self-Aligned Metal/IDP Technology, IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997 pp. 2207-2212.

Affiliated with

Also associated with

Rating

Silicided base structure for high frequency transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicided base structure for high frequency transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicided base structure for high frequency transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4269388