Silicide targets for sputtering and method of manufacturing the

Details Silicide targets for sputtering and method of manufacturing the Silicide targets for sputtering and method of manufacturing the

1994-04-07

1995-10-24

Lewis, Michael

Dentistry

Apparatus

Hand manipulatable implement

264101, 264102, 264125, 20429812, C23C 1434, C01B 3306

Patent

active

054607930

ABSTRACT:
Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

REFERENCES:
patent: 875675 (1907-12-01), Potter
patent: 4619697 (1986-10-01), Hijikata et al.
patent: 5234643 (1993-08-01), Matsumoto
patent: 5240658 (1993-08-01), Lukacs, III et al.

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