Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1995-04-17
1997-04-08
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
75245, 419 10, 419 23, 419 26, 419 38, 20429812, 428546, C23C 1434, C22C 2900, C22C 3200
Patent
active
056183976
ABSTRACT:
Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.
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Anan Junichi
Kano Osamu
Yamakoshi Yasuhiro
Yasui Koichi
Breneman R. Bruce
Japan Energy Corporation
McDonald Rodney G.
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