Silicide layer forming method and semiconductor integrated circu

Details Silicide layer forming method and semiconductor integrated circu Silicide layer forming method and semiconductor integrated circu

1999-10-28

2000-08-22

Smith, Matthew

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, 438238, 438505, 438299, H01L 218242

Patent

active

061071560

ABSTRACT:
A surface of a conductive member such as a gate electrode provided with a silicon layer is roughened. The roughened silicon layer is silicified so that its width is substantially increased, whereby phase transition of the silicide layer is simplified. Thus, the resistance of the refined silicide layer is reduced due to the simplified phase transition.

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